Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm²

A. Pyzyna,Hsinyu Tsai,Michael F. Lofaro,Lynne M. Gignac,Hiroyuki Miyazoe,Robert L. Bruce,Chris M. Breslin,Markus Brink,D. Klaus,M. Guillorn,Christian Lavoie,Kenneth P. Rodbell,Dae-Gyu Park,Eric A. Joseph

2017 IEEE International Interconnect Technology Conference (IITC)（2017）

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摘要

The resistivity of damascene Cu is measured at cross-sectional area as low as 95 nm ² . The impact of aspect ratio and line edge roughness on resistivity is investigated. Kelvin resistance test structures are demonstrated with 28 nm pitch wires patterned by directed self-assembly of lamellar block copolymers. The effective resistivity of TaN/Ta/Cu wires is compared with alternative metals.

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damascene,copper,resistivity,interconnect,directed self-assembly,line edge roughness

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Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm2

Resistivity of copper interconnects at 28 nm pitch and copper cross-sectional area below 100 nm²