DIBL effect gauging the integrity of nano-node n-channel FinFETs

The DIBL effect is well-known in short-channel devices. Using this good effect, we can detect the device integrity with channel-length or -width variation and the channel punch-through effect, causing more leakage contributing the OFF current. As the channel width is increased at the long-channel lengths, the punch-through voltage (V _PT ) is also increased little due to the more uniformity of halo implantation or photo controllability.