Optical properties of plasma-enhanced chemical vapor deposited SiCxNy films by using silazane precursors

In this study, amorphous silicon carbonitride (SiCxNy) films were fabricated by radio frequency (RF) chemical vapor deposition (PECVD) using a single silazane precursor and a low power density (0.15W/cm3) for better compositional control. The effects of the precursor chemical structure (C/Si ratio, CSiN structure, and vinyl groups) and deposition temperature (Ts) on the chemical structure and optical properties of SiCxNy films were examined using Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy. Specifically, two new single precursors; namely, n-methyl-aza-2,2,4-trimethylsilacyclopentane (MTSCP) and 1,3-divinyl-1,1,3,3-tetramethyl-disilazane (DVTMDS) were studied and compared.