Multi-Bit NVRAMs Using Quantum Dot Gate Access Channel

This paper presents a quantum dot access channel nonvolatile random access memory (QDAC-NVRAM) which has comparable write and erase times to conventional random access memories but consumes less power and has a smaller footprint. We have fabricated long-channel (W/L=15 mu m/10 mu m) nonvolatile random access memories (NVRAMs) with 4 mu s erase times. These devices are CMOS-compatible and employ novel quantum dot access channel (QDAC) which enables fast storage and retrieval of charge from the floating gate layer. In addition, QDNVRAMs are shown to be capable of storing multiple-bits and potentially scalable to sub 22nm. We are also presenting the simulation results. This paper also presents a memory array architecture using QDAC-NVRAMs.