Exploiting NbOx metal-insulator-transition device as oscillation neuron for neuro-inspired computing

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)（2017）

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摘要

In this work, we fabricated the Pt/NbO _x /Pt MIT device showing threshold switching. XPS results revealed that there are mixed NbO ₂ and Nb ₂ O ₅ phases in the NbO _x thin film. The self-oscillation of NbO _x device with a resistor has been demonstrated, showing its feasibility as an oscillation neuron.

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关键词

Metal-insulator-transition,oscillation,neuron,NbOx,neuro-inspired computing

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