Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide

M. H. Lee, P.-G. Chen,S.-T. Fan, C.-Y. Kuo,H.-H. Chen, S.-S. Gu,Y.-C. Chou,C.-H. Tang, R.-C. Hong,Z.-Y. Wang,M.-H. Liao,Kai-Shin Li,M. C. Chen,C. W. Liu

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2017）

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摘要

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

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关键词

steep switching,ferroelectric hafnium-based oxide,FE-HZO negative capacitance FET,FE-HZO NC FET,annealing,subthreshold swing,FE-HZO thickness,NC-FinFET modeling,polarization hafnium-based oxide,temperature 800 degC,size 14 nm,HfZrOx

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