InAlN/GaN high electron mobility micro-pressure sensors for high-temperature environments

Caitlin A. Chapin,Ruth A. Miller,Karen M. Dowling,Ruiqi Chen,Debbie G. Senesky

Sensors and Actuators A: Physical（2017）

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摘要

•For the first time, an InAlN/GaN HEMT is leveraged to sense pressure.•Modeling results compare the 2DEG response to pressure for InAlN and AlGaN devices.•A ring-shaped, InAlN/GaN pressure sensor is fabricated and tested to 28.5psig.•Solid-state and released InAlN HEMT are compared at temperatures up to 300°C.

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关键词

InAlN/GaN HEMT,AlGaN/GaN HEMT,High electron mobility transistor,Micro-pressure sensor,Strain transduction,Extreme environment,High temperature sensor

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