Ultraviolet Emission from Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes

Chen Sheng Lin,Kate Cavanagh,Hei Chit L. Tsui,Andrei P. Mihai,Bin Zou,D. W. E. Allsopp,M. A. Moram

IEEE Photonics Journal（2017）

引用 6|浏览9

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摘要

Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/ n-GaN metal-insulator-semiconductor (MIS) light emitting diodes, which do not contain p -doped material. Current-voltage and electroluminescence data indicate that an AlN insulating layer thickness of 10 nm results in optimized diode behavior and maximum ultraviolet emission: At lower thicknesses carrie...

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关键词

Aluminum nitride,III-V semiconductor materials,Light emitting diodes,Resonant tunneling devices,Insulators,Temperature measurement,Semiconductor diodes

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