A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region

A silicon carbide (SiC) injection enhanced gate transistor with accumulation channel (AC-IEGT) is proposed in this letter, which has a barrier layer with small windows under the p+ shielding region. The new structure can enhance electron injection through accumulation channel. Thus, an optimized carrier density can be obtained in the emitter side. Compared with conventional SiC insulated gate bipo...