Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise

Thiago Hanna Both,Jeroen Croon,Mauricio Banaszeski da Silva,Hans Tuinhout,Andries J. Scholten,Adrie Zegers-van Duijnhoven,Gilson I. Wirth

IEEE Transactions on Electron Devices（2017）

引用 9|浏览46

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摘要

A low-frequency noise (LFN) analysis technique is introduced, based on the autocorrelation of the LFN spectra in terms of frequency, biasing, and temperature. This technique reveals information about the mechanisms behind 1/f noise that is difficult to obtain otherwise. These correlation analyses provide strong evidence that the LFN of both nMOS and pMOS transistors is mainly composed of the super...

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关键词

Correlation,MOSFET,Sociology,1f noise,Silicon

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