Imaging the Impact of Proton Irradiation on Edge Terminations in Vertical GaN PIN Diodes

Kimberlee C. Collins,Michael P. King,Jeramy Ray Dickerson,Gyorgy Vizkelethy,Andrew Armstrong,Arthur J. Fischer,Andrew A. Allerman,Robert Kaplar,Ozgur Aktas,Isik C. Kizilyalli,Albert Alec Talin,François Léonard

IEEE Electron Device Letters（2017）

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摘要

Devices based on GaN have shown great promise for high power electronics, including their potential use as radiation tolerant components. An important step to realizing high power diodes is the design and implementation of an edge termination to mitigate field crowding, which can lead to premature breakdown. However, little is known about the effects of radiation on edge termination functionality....

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关键词

Radiation effects,Protons,Anodes,Gallium nitride,Image edge detection,PIN photodiodes,Laboratories

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