2 /M stack (where M=Cu, Ni, Ti,"/>

Metal-electrode-dependent negative photoconductance response of the nanoscale conducting filament in the SiO2-metal stack

Tomohito Kawashima, Y. Zhou,Kwang Sing Yew,Haizhong Zhang,Diing Shenp Ang

2017 China Semiconductor Technology International Conference (CSTIC)(2017)

引用 0|浏览2
暂无评分
摘要
Nanoscale resistance reset of the SiO 2 /M stack (where M=Cu, Ni, Ti, Al, p-type Si) was investigated via a conductive atomic force microscope (C-AFM). Visible-light illumination triggers a resistance reset for Ti, Al and p-type Si electrodes, however such a behavior is not always observed for the Cu and Ni electrodes. Conversely, electrical reset is possible for Cu and Ni, but not for the others. The observed variations in optical and electrical induced resistive switching behaviors may be caused by a metal-electrode-dependent conducting filament.
更多
查看译文
关键词
metal-electrode-dependent negative photoconductance response,nanoscale conducting filament,nanoscale resistance reset,conductive atomic force microscope,C-AFM,visible-light illumination,electrical reset,electrical induced resistive switching behaviors,optical induced resistive switching behaviors,metal-electrode-dependent conducting filament,SiO2-Cu,SiO2-Ni,SiO2-Ti,SiO2-Al,SiO2-Si
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要