Total Ionizing Dose Effects of Gamma-Ray Radiation on NbO x -Based Selector Devices for Crossbar Array Memory

The transition metal oxide NbO2 is regarded as a promising selector device to be integrated with resistive random access memory for the high-density crossbar array architecture. Understanding its total ionizing dose (TID) response would help assess the reliability of using this selector device in radiation environments. In this paper, we investigate the TID effect of gamma-ray (γ-ray) radiation on...