Device Characterization and Design Guideline of Amorphous InGaZnO Junctionless Thin-Film Transistor

Amorphous InGaZnO junctionless thin-film transistors (a-IGZO JL-TFTs) with different active layer thicknesses and thermal treatments were fabricated. The unique feature of a-IGZO JL-TFTs is that all of the active layer and source/drain (S/D) electrodes are realized by the deposition of the InGaZnO thin film. A quantitative analysis to completely deplete the active layer when the device is turned O...