A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

IEEE Transactions on Power Electronics(2018)

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摘要
This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half-bridge two-level SiC power module with six MOSFETs and can be used for coupled electrothermal simulation. The finite-element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical resistor-capacitor (RC) network model. It wa...
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关键词
MOSFET,Multichip modules,Silicon carbide,Semiconductor device modeling,Transient analysis,Junctions,Mathematical model
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