Evolution of strain throughout gallium nitride deposited on silicon carbide
JOURNAL OF CERAMIC PROCESSING RESEARCH(2007)
摘要
During GaN growth on an on-axis SiC substrate, a large density of dislocations (similar to 10(9) cm(-2)) is unavoidably generated by the GaN/SiC misfit, uncontrolled misorientation in the substrate and defects present at the surface of the substrate. Recently a unique SiC substrate was developed with step-free and stepped mesas as well as continuous surface areas similar to a standard wafer all in close proximity. It is now possible to isolate the influence of defects and steps on the deposition of GaN on SiC. This paper provides a link between the dislocation environment and the strain state in the GaN film as well as the change of this strain with increasing thickness.
更多查看译文
关键词
gallium nitride,silicon carbide,strain,growth
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要