Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE

L. Nattermann,P. Ludewig,E. Sterzer,K. Volz

Journal of Crystal Growth（2017）

引用 13|浏览4

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摘要

•MOVPE growth of two quaternary containing III/V semiconductors.•Influence of strain for the growth of quaternary III/V bismides.•Increased Bi incorporation in GaAs based quaternary III/V semiconductors.•Influence of Bi surface coverage on incorporation of P and N.

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关键词

A3. Metalorganic vapour phase epitaxy,A1. Characterization,A1. High resolution X-ray diffraction,B1. Bismuth compounds,B2. Semiconducting III–V materials

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