Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation

Takashi Matsukawa,Yongxun Liu,Takahiro Mori,Yukinori Morita,Shintaro Otsuka,S. O'uchi,Hiroshi Fuketa,Shinji Migita,Meishoku Masahara

Solid-State Electronics（2017）

引用 4|浏览40

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摘要

•Parasitic resistance and its variability are obstacles for the scaling of FinFETs.•Reducing the fin thickness degrades in parasitic resistance and its variability.•Implantation of As instead of P for the extension doping causes the same effect.•These phenomena are observed to be caused by residual defects in the crystalline fin.

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关键词

FinFET,Ion implantation,Parasitic resistance,Variability,Crystal defects

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