Performance and Stability Benchmarking of Monolithic 3-D Logic Circuits and SRAM Cells With Monolayer and Few-Layer Transition Metal Dichalcogenide MOSFETs

For the first time, considering the architecture of monolithic 3-D integration, we evaluate and benchmark the performance of 3-D logic circuits and stability/performance of 3-D 6T SRAM cells with monolayer and few-layer transition metal dichalcogenide (TMD) devices based on ITRS 2028 (5.9 nm) technology node. The impact of random variations on the cell stability is also investigated. With the poss...