TFET-based Well Capacity Adjustment in Active Pixel Sensor for Enhanced High Dynamic Range

Electronics Letters(2017)

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摘要
A tunnel field-effect transistor (TFET)-based pixel circuit for well capacity adjustment that does not require subthreshold operation on the part of the reset transistor is presented. In CMOS, this subthreshold operation leads to temporal noise, distortion and fixed pattern noise, becoming a primary limiting performance factor. In the proposed circuit, the asymmetric conduction associated with TFE...
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关键词
CMOS image sensors,distortion,field effect transistors,gallium compounds,III-V semiconductors,tunnel transistors,wide band gap semiconductors
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