Modeling tools for design of type-II superlattice photodetectors
Infrared Physics & Technology(2017)
摘要
•The external quantum efficiency (EQE) and dark current was studied.•It was found that the EQE is limited by the diffusion length.•This also leads to a strong temperature dependence of the EQE.•A reduction of the absorber doping increases the diffusion length.•Thereby, the EQE becomes temperature independent, but dark current increases.
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关键词
Semiconductor device modeling,Electrical simulation,Type-II superlattice,SLS,Infrared detector,InAs/GaSb superlattice,MWIR photodetector,Doping,Quantum efficiency,Numerical precision,Carrier diffusion
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