Impact of Subthreshold Carrier Statistics on the Low-Frequency Noise in MOSFETs

Arjun Ajaykumar,Xing Zhou,Siau Ben Chiah,Binit Syamal

IEEE Transactions on Electron Devices（2017）

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摘要

Low-frequency noise analysis is being used as a method to understand the nature of carrier transport in new material-based devices and to improve the sensitivity of sensors operating in the subthreshold regime. In this paper, we show that the (gm/Id)2 method used in carrier number fluctuation based noise formulation needs modification in the subthreshold regime. Based on the new formulation, many ...

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关键词

Logic gates,MOSFET,Silicon,Low-frequency noise,Nanoscale devices,Hafnium compounds

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