MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8

L. Nattermann,Andreas Beyer,P. Ludewig, T. Hepp,E. Sterzer,K. Volz

Journal of Crystal Growth（2017）

引用 10|浏览6

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摘要

•First experimental results on novel material system Ga(PBi) on GaP.•Possible candidate for laser applications on Si.•High quality MOVPE growth of Ga(PBi).•Surface and interface investigations on Ga(PBi) on an atomic scale.•Comprehensive growth studies on Ga(PBi) material.

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关键词

A1. High resolution X-ray diffraction,A3. Metalorganic vapor phase epitaxy,B2. Semiconducting III–V materials,B2. Semiconducting compounds on silicon,B3. Infrared device

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