Flexible metal-oxide thin film transistor circuits for RFID and health patches
2016 IEEE International Electron Devices Meeting (IEDM)(2016)
摘要
We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital electronics to transmit the acquired data wirelessly to a base station. We examine the electronic performance of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) during mechanical bending. We discuss several ways to further boost the electronic transistor performance of n-type amorphous oxide semiconductors, by modifying the semiconductor or by improving the transistor architecture. We show analog and digital circuits constructed with several architectures, all based on n-type-only amorphous oxide technology. From circuit point of view, the discovery of a p-type amorphous semiconductor matching known n-type amorphous semiconductors would be of great importance. The present best-suited p-type is SnO, but it is poly-crystalline in nature and shows some ambipolarity due to the presence of n-type SnO2. In search of a better p-type semiconductor, preferably amorphous, we present recent insights into the band structure of potential amorphous oxide p-type semiconductors.
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关键词
InGaZnO,SnO,metal-oxide thin film transistor circuits,RFID,health patches,flexible electronics,flexible health patch,analog sensor,digital electronics,base station,mechanical bending,electronic transistor,n-type amorphous oxide semiconductors,analog circuits,digital circuits,p-type amorphous semiconductor,n-type amorphous semiconductor
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