Cost-effective fabrication of In 0.53 Ga 0.47 As-on-insulator on Si for monolithic 3D via novel epitaxial lift-off (ELO) and donor wafer re-use

Defect-less semiconductor-on-insulator (-OI) by a cost-effective and low temperature process is strongly needed for monolithic 3D (M3D) integration. Toward this, in this paper, we present a cost-effective fabrication of the InGaAs-OI structure featuring the direct wafer bonding (DWB) and the epitaxial lift-off (ELO) techniques as well as the re-use of the InP donor wafer. We systematically investigated the effects of the pre-patterning of the III-V layer before DWB, surface reforming (hydrophilic), and electro-chemical etching to speed up the ELO process for a fast and high-throughput process, which is essential for cost reduction. We also demonstrated the re-usability of the InP donor wafer. Finally, as a result of the high film quality of the InGaAs channel combined with DWB and ELO, fabricated InGaAs-OI MOSFETs show a record-high effective mobility of ∼2800 cm 2 /Vs among surface channel Ino.53Gao.47As MOSFETs reported so far.