4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure

S.-W. Chung, T. Kishi,J. W. Park,M. Yoshikawa,K. S. Park,T. Nagase,K. Sunouchi,H. Kanaya,G. C. Kim, K. Noma,M. S. Lee, A. Yamamoto, K. M. Rho,K. Tsuchida,S. J. Chung, J. Y. Yi,H. S. Kim, Y.S. Chun,H. Oyamatsu, S. J. Hong

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2016）

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摘要

For the first time, 4Gbit density STT-MRAM using perpendicular MTJ in compact cell was successfully demonstrated through the tight distributions for resistance and magnetic properties. This paper includes the results regarding parasitic resistance control process, MTJ process, and MTJ stack engineering. Both of successful 4Gb read and write operations were performed with high TMR, low Ic. This result will brighten the prospect of high-density STT-MRAM.

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关键词

STT-MRAM,perpendicular MTJ process,compact cell structure,resistance property,magnetic property,parasitic resistance control process,MTJ stack engineering,read and write operation,TMR,storage capacity 4 Gbit

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