Silicon-package co-design of a 45nm 200MHz bandwidth CMOS RF-to-Serdes transceiver system on chip (SoC)

2016 IEEE 25th Conference on Electrical Performance Of Electronic Packaging And Systems (EPEPS)(2016)

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摘要
In this paper we detail the silicon-package electrical co-design of a 45nm CMOS, 400MHz to 4GHz, 3GPP TDD & FDD, RF-to-Serdes base station transceiver system on chip (SoC). Electrical optimization of the silicon-package RF paths, to achieve desired performance, was achieved through a coupled circuit-to-electromagnetic co-design modeling and simulation flow. Laboratory measurements, on a real SoC system, are presented that validate the integrity of the modeling and simulation methodology.
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关键词
CMOS,RF-to-bits,Silicon-Package Co-Design,RF figure of merits (FOM)
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