Unveiling interfaces between In-rich and Ga-rich GaInP vertical slabs of laterally composition modulated structures
APPLIED PHYSICS EXPRESS(2017)
摘要
We report changes at the interface between Ga-rich/In-rich GaInP vertical slabs in laterally composition modulated (LCM) GaInP as a function of the V/III ratio. The photoluminescence exhibits satellite peaks, indicating that the parasitic potential between the GaInP vertical slabs disappears as the V/III ratio decreases. However, a high V/III ratio leads to an abrupt interface, increasing the parasitic potential because of the phosphorus-amount- dependent diffusion of group-III atoms during growth. These results suggest that the V/III ratio is an important parameter that must be wisely chosen in designing optoelectronic devices incorporating LCM structure. (C) 2017 The Japan Society of Applied Physics
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关键词
vertical slabs,structures,in-rich,ga-rich
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