High Mobility High-Ge-Content SiGe PMOSFETs Using Al 2 O 3 /HfO 2 Stacks With In-Situ O 3 Treatment

Takashi Ando,Pouya Hashemi,John Bruley,John Rozen,Yohei Ogawa,Siyuranga O. Koswatta,Kevin K. Chan,E. Cartier,Renee Mo,Vijay Narayanan

IEEE Electron Device Letters（2017）

引用 43|浏览68

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摘要

We developed an Al2O3/HfO2 bi-layer gate dielectric with an in-situ O3 treatment for interface state density (Dit) and gate leakage current density (Jg) reductions on SiGe channels. We observed Ge-content dependent equivalent oxide thickness (EOT) scaling and EOT 0.44 nm was achieved with an MOS capacitor with a Si0.05Ge0.95 substrate. The O3 treatment enabled application to non-planar device stru...

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关键词

High-k dielectric materials,Silicon germanium,Logic gates,FinFETs,Silicon,Substrates

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