Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A

Single-crystal hexagonal perovskite YAlO3 has been attained through postdeposition rapid thermal annealing with temperatures above 900 degrees C on nanolaminated atomic-layer-deposited Y2O3 (2.03 nm)/Al2O3 (1.08 nm) multilayers. The perovskite film is epitaxially grown on GaAs(111) A substrates. The crystallography of the heterostructure was studied utilizing synchrotron radiation x-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The epitaxial relationship between YAlO3 and GaAs is YAlO3(0001) [11 (2) over bar0] parallel to GaAs (111) [10 (1) over bar], as determined from the radial scan along the in-plane direction. The cross-sectional STEM image reveals that the crystalline YAlO3 is continuous and the XRD study detects no other crystalline phases. (C) 2016 American Vacuum Society.