Semiconductor THz source scalable to mJ energy

J. A. Fülöp, Gy. Polonyi,B. Monoszlai,Giedrius Andriukaitis,Tadas Balciunas,Audrius Pugzlys,Andrius Baltuska,János Hebling

2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)（2016）

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摘要

THz pulses up to 14 J energy and 0.7% efficiency were generated by ZnTe sources with tilted pulse front pumping at 1.7 μm, above the three-photon absorption edge. A monolithic ZnTe contact-grating source was demonstrated, which is scalable to mJ energies.

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关键词

semiconductor THz source,THz pulses,three-photon absorption edge,monolithic contact-grating source,ZnTe

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