Optimization of RRAM-based physical unclonable function with a novel differential read-out method

IEEE Electron Device Letters(2017)

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摘要
RRAM-based physical unclonable function (PUF) leveraging the remarkable resistance variability has been proposed and experimentally demonstrated on a 1-kb one-transistor one-resistor array. In this letter, a novel differential read-out method is utilized to reduce the effect of resistance window degradation. The RRAM PUF reliability is optimized through a reliability-enhancement design and oxide s...
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关键词
Resistance,Reliability engineering,Degradation,Security,Random access memory,Electrical resistance measurement
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