Influence of Intercell Trapped Charge on Vertical NAND Flash Memory

Woo Young Choi,Hyug Su Kwon,Yong Jun Kim,Byungin Lee,Hyun-Seung Yoo,SangMoo Choi,Gyu-Seog Cho,Sung-Kye Park

IEEE Electron Device Letters（2017）

引用 17|浏览6

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摘要

The influence of intercell trapped charge (ITC)-the charge trapped at the inter-cell nitride regions by fringe electric fields during program and erase operations-on vertical NAND (VNAND) flash memory is investigated. In addition to conventional degradation mechanisms such as tunnel oxide damage, ITC deteriorates the transconductance and read current of VNAND flash memory cells. The influence of I...

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关键词

Degradation,Flash memories,Logic gates,Electron traps,Electric fields,Tunneling

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