Wavelength dependence of efficiency limiting mechanisms in type I GaInAsSb/GaSb lasers emitting in the mid-infrared

Type-I GaInAsSb lasers, emitting between 2–3 µm are investigated using temperature and high pressure characterization techniques. A model of the Auger processes is used to fit the non-radiative component of the threshold current at room temperature, identifying the dominance of different Auger losses across the wavelength range of operation.