Analysis Of Thz Detection Saturation Processes In Ingaas-Based Hemts

A. Mahi,C. Palermo,H. Marinchio, A. Belgachi,S. Blin,L. Varani

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)（2016）

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摘要

By numerical simulations, we investigate the behavior of the current photoresponse of InGaAs high electron mobility transistors (HEMTs) submitted to THz radiations. By increasing the incoming wave power density, the response of the device is shown to saturate, in agreement with experimental results. This limitation of the detection features is shown to be due to electron heating.

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关键词

THz detection saturation processes,high electron mobility transistors,HEMT,current photoresponse,THz radiations,wave power density,electron heating,InGaAs

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