Electrical Characterization and Surface Topography of SiC Nanoparticle/CNTs Embedded 4H-SiC MOS Structure

In this study, the surface and electrical properties of 4H-SiC MOS tunneling devices embedded with SiC nanoparticle/carbon nanotubes (CNTs) were investigated in order to analyze the tunneling mechanism in MOS structure. SiC nanoparticle/CNTs blended in isopropyl alcohol have been deposited on oxide surface. FTIR spectroscopy based studies for chemical composition of the materials obtained some interaction of blended SiC nanoparticle/CNTs. The embedded 4H-SiC MOS devices improve the dark tunneling current and photo-conductivity, respectively. When the bias is applied 15 V, the photo-conductivity of dispersed SiC nanoparticle/CNTs device is 18.8 larger than the value of 0.96 measured in the MOS device. The introduction of blended SiC nanoparticle/CNTs improves the photo-conductivity.