3-D Integration and ESD Protection: Design and Analysis
IEEE Transactions on Device and Materials Reliability(2016)
摘要
A set of design of experiments matrix was created to evaluate the possibilities of electrostatic-discharge (ESD) failures during the complex 3-D integration process as a function of the ESD protection level. A detailed set of pass/fail criteria based on circuit performance was established. Various phases of 3-D integration are monitored for ESD failures. Based on measured samples, it was observed ...
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关键词
Electrostatic discharges,Three-dimensional displays,Through-silicon vias,Topology,Bonding,Testing,Field effect transistors
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