Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes

Ling Lv,Peixian Li,Xiaohua Ma,Linyue Liu,Ling Yang,Xiaowei Zhou,Jincheng Zhang,Yan-Rong Cao,Zhen Bi,Teng Jiang,Qing Zhu,Yue Hao

IEEE Transactions on Nuclear Science（2017）

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摘要

We studied how irradiation with fast (14 MeV) and thermal (<;0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the...

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关键词

Neutrons,Gallium nitride,Radiation effects,PIN photodiodes,Lattices,Passivation,Phonons

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