Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET

•Experimental results of CBC and DSBC SOI LDMOSFET are demonstrated.•There is no device foot print increase by introducing diamond-shaped P+ diffusions.•Measurement results demonstrate on-state breakdown voltage improvement.•Enhanced “On-resistance×Area” figure of merit is obtained.•Area efficiency of the DSBC device proposes it as a promising candidate.