Inas/Gasb-On-Insulator Single Channel Complementary Metal-Oxide-Semiconductor Transistors On Si Structure

We demonstrate a single channel III-V complementary metal-oxide-semiconductor (CMOS) transistors by ultrathin body InAs/GaSb-on-insulator (-OI) channels on Si. The ultrathin InAs layers with the quantum confinement and tight gate-control of the identical InAs/GaSb-OI channel can realize III-V CMOS operation. The quantum well InAs/GaSb-OI on Si structures with the proper thickness of the InAs and GaSb layers can allow us to operate both n-channel and p-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs and p-MOSFETs) with high channel mobilities in an identical InAs/GaSb-OI transistor. The InAs thickness needs to be less than or similar to 2.5 nm for CMOS operation in the single channel InAs/GaSb-OI structure. Published by AIP Publishing.