An Area Efficient Stacked Latch Design Tolerant to SEU in 28 nm FDSOI Technology

IEEE Transactions on Nuclear Science(2016)

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摘要
In this paper, we present D flip-flop, Quatro, and stacked Quarto flip-flop designs fabricated in a commercial 28-nm CMOS FDSOI technology. Stacked-transistor structures are introduced in the stacked Quatro design to protect the sensitive devices of the original structure. Striking either of the stacked devices will not upset the latch because the conduction path to the supply rail is still cut of...
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关键词
Transistors,Radiation hardening (electronics),Single event upsets,Silicon-on-insulator,Flip-flops,Latches
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