Towards Next Generations of Silicon Photonics

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)(2016)

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摘要
Process flow and device performances of an industrial 300mm Silicon Photonics platform demonstrating 25Gb/s per data lane when associated with 55nm BICMOS are presented. Advanced designs targeting 56Gb/s and using this platform are introduced. Device improvements suitable to convert such demonstrators into products are shown. Backside reflector, 40Ghz photodiode as well as WDM capability are presented as some potential process and device evolutions for future Silicon Photonics platforms. Finally laser integration challenges and opportunities are discussed.
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关键词
optical transceivers,laser integration,wavelength division multiplexing,WDM capability,photodiode,backside reflector,device improvements,advanced designs,BICMOS,device performances,process flow,silicon photonics,bit rate 25 Gbit/s,bit rate 56 Gbit/s,bandwidth 40 GHz,Si
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