Short circuit detection using the gate charge characteristic for Trench/Fieldstop-IGBTs

In this paper, the detection of insulated-gate bipolar transistors (IGBT) short-circuit failures based on the gate charge characteristic is investigated. The main focus are impacts of the parasitic inductances and the operating point on the gate charge characteristic, as well as limitations for this protection concept by this effects. An analogous detection circuit is developed and relevant implementation aspects are given. The concept is validated with a state-of-the-art Trench/Fieldstop-IGBT for electric vehicle traction application.