Connector-less SiC power modules with integrated shunt — Low-profile design for low inductance and low cost
2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)(2016)
摘要
This paper presents the design, manufacture and characterization of connector-less 1200 V SiC MOSFET half-bridge power modules based on AlN DCB substrate. The modules contain four MOSFETs and no external antiparallel diodes. They are rated for a current of 40 A and include a shunt. Static and dynamic measurement results are presented. Multiphysics simulations are used to validate the measured data. The modules show a power path inductance below 3 nH. The power rating of the implemented chip shunt resistors is sufficient for the performed characterizations but requires revision. The switching loss at turn-on is 340 μJ at 23 A, 800 V, the turn-off loss is well below 50 μJ, principally allowing MHz operation in resonant mode.
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关键词
power MOSFET,power measurement,power electronics,switching frequency
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