Independent Al2O3/SiNx:H and SiO2/SiN x:H Passivation of p+ and n+ Silicon Surfaces for High-Performance Interdigitated Back Contact Solar Cells

In order to improve interdigitated back contact (IBC) solar cell efficiencies, the entire solar cell surface must be well passivated. Al2O3/SiNx:H and SiO2/SiNx:H passivation stacks have been widely adopted for high-efficiency silicon solar cells. We explored IBC solar cells with 1) only SiO2/SiNx:H; 2) only Al2O3/SiNx:H passivating both diffused surfaces; or 3) independent p+ emitter and n+ back ...