Impact Of Surface Orientation On (100), (111)A, And (111)B Ingaas Surfaces With In Content Of 0.53 And 0.70 And On Their Al2o3/Ingaas Metal-Oxide-Semiconductor Interface Properties

We have studied the impact of surface orientation on the (100), (111)A, and (111)B InGaAs surfaces with the In content of 0.53 and 0.70 and on their Al2O3/InGaAs meta-oxide-semiconductor interface properties using NH4OH and (NH4)(2)S-x solutions. The (111)A and (111)B surfaces with NH4OH cleaning can achieve good interface properties as similar to (100) surfaces, while the (111)A surfaces with (NH4)(2)S-x cleaning can achieve better interface properties than (100) and (111)B surfaces. Published by AIP Publishing.