Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

•AlInN/GaN transistors have a strong interest for high power electronic.•AlInN/GaN transistors has a strong interest for high temperature applications.•Pre-existent electrical traps effects have an influence on the reliability of AlInN/GaN HEMTs.•Degradation of the IDS and Raccess has been highlighted during electrical stresses.•Degradation mechanisms in GaN-based transistors are studied by electroluminescence techniques.