A Low-Power 670-GHz InP HEMT Receiver

William R. Deal,Kevin M. K. H. Leong,Alex Zamora,W. Yoshida,Mike Lange,Ben S. Gorospe,Khanh Nguyen,Gerry X. B. Mei

IEEE Transactions on Terahertz Science and Technology（2016）

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摘要

In this letter, a 670-GHz receiver using 25-nm InP HEMT technology is presented. The receiver obtains the lowest reported noise figure for a transistor-based receiver operating at this frequency (<;10.3 dB), while consuming a total dc power of only 1.8 W. This includes dc power consumption of a ×18 multiplier chain for the local oscillator and linear dc regulators. These results show that InP HEMT...

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关键词

Receivers,Mixers,Indium phosphide,III-V semiconductor materials,HEMTs,MMICs,Gain

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