Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors

Chan-Yong Jeong,Hee-Joong Kim,Dae-Hwan Kim,Hyun-Suk Kim,Tae Sang Kim,Jong-Baek Seon,Sunhee Lee,Dae Hwan Kim,Hyuck-In Kwon

IEEE Electron Device Letters（2016）

引用 21|浏览5

暂无评分

摘要

In this letter, the carrier transport mechanism in a high-mobility zinc oxynitride (ZnON) thin-film transistor (TFT) is investigated by analyzing the gate bias and temperature dependence of conductance and intrinsic field-effect mobility (μFEi) in the subthreshold and above-threshold regions, respectively. The measured drain currents increase with a temperature and show a thermally activated Arrhe...

查看译文

关键词

Thin film transistors,Temperature measurement,Temperature dependence,Scattering parameters,Logic gates,Carrier transport mechanisms,Phonons

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要