Heavy Ion Characterization of Temporal-, Dual- and Triple Redundant Flip-Flops Across A Wide Supply Voltage Range in A 65 Nm Bulk Cmos Process
IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2016）
关键词
Complimentary metal-oxide semiconductor (CMOS),flip-flop,low power,radiation tolerant,single event transient (SET),single event upset (SEU),supply voltage
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